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| FDMS2734 N-Channel UltraFET Trench(R) MOSFET February 2007 FDMS2734 N-Channel UltraFET Trench(R) MOSFET 250V, 14A, 122m Features General Description UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Max rDS(on) = 122m at VGS = 10V, ID = 2.8A Max rDS(on) = 130m at VGS = 6V, ID = 1.7A Low Miller Charge Optimized efficiency at high frequencies RoHS Compliant tm Application DC - DC Conversion Pin 1 S S S G D D D D D D D 5 6 7 8 4G 3S 2S 1S D Power 56 (Bottom view) MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Silicon limited) -Continuous -Pulsed Power Dissipation Power Dissipation TC = 25C TA = 25C (Note 1a) TC = 25C TA = 25C (Note 1a) Ratings 250 20 14 2.8 16 78 2.5 -55 to +150 W C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.6 50 C/W Package Marking and Ordering Information Device Marking FDMS2734 Device FDMS2734 Package Power 56 Reel Size 13'' Tape Width 12mm Quantity 3000 units (c)2007 Fairchild Semiconductor Corporation FDMS2734 Rev.C 1 www.fairchildsemi.com FDMS2734 N-Channel UltraFET Trench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 200V, VGS = 20V, VGS = 0V 250 250 1 100 V mV/C A nA On Characteristics (Note 2) VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 2.8A VGS = 6V, ID = 1.7A VGS = 10V, ID = 2.8A TJ = 125C VDS = 10V, ID = 2.8A 2 3 -11 105 110 217 11 122 130 258 S m 4 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 100V, VGS = 0V, f = 1MHz f = 1MHz 1775 80 25 0.9 2365 110 40 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = 0V to 10V VDD = 125V ID = 2.8A VDD = 125V, ID = 2.8A VGS = 10V, RGEN = 6 22 10 36 12 30 7 9 36 20 58 22 42 ns ns ns ns nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 2.8A (Note 2) 0.75 79 214 1.20 119 321 V ns nC IF = 2.8A, di/dt = 100A/s Notes: 1: RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 50C/W when mounted on a 1 in2 pad of 2 oz copper b. 125C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDMS2734 Rev.C 2 www.fairchildsemi.com FDMS2734 N-Channel UltraFET Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 30 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.2 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 10V VGS = 5V VGS = 6V 25 ID, DRAIN CURRENT (A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 5 VGS = 4.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 5V 20 15 10 5 0 VGS = 6V VGS = 4.5V VGS = 10V 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 10 15 20 ID, DRAIN CURRENT(A) 25 30 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 400 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = 2.8A VGS = 10V ID = 7A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 320 TJ = 150oC 240 160 TJ = 25oC 80 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On Resistance vs Junction Temperature 16 IS, REVERSE DRAIN CURRENT (A) 20 10 Figure 4. On-Resistance vs Gate to Source Voltage ID, DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 0V 12 TJ = 150oC TJ = -55oC 1 TJ = 150oC TJ = -55oC 8 0.1 TJ = 25oC 4 TJ = 25oC 0.01 0 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 6 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS2734 Rev.C 3 www.fairchildsemi.com FDMS2734 N-Channel UltraFET Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 8 6 4 2 0 VDD = 125V VDD = 175V 3000 1000 CAPACITANCE (pF) VDD =75V Ciss Coss 100 0 8 16 24 Qg, GATE CHARGE(nC) 32 10 0.1 f = 1MHz VGS = 0V Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 15 12 9 VGS = 6V 4 IAS, AVALANCHE CURRENT(A) ID, DRAIN CURRENT (A) 3 VGS = 10V 2 TJ = 125oC TJ = 25oC 6 3 RJC = 1.6 C/W o 1 0.01 0.1 tAV, TIME IN AVALANCHE(ms) 0.5 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 Figure 9. Unclamped Inductive Switching Capability 20 10 ID, DRAIN CURRENT (A) Figure 10. Maximum Continuous Drain Current vs Case Temperature 3000 1000 VGS = 10V P(PK), PEAK TRANSIENT POWER (W) FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - T A ---------------------125 TA = 25oC 1 100us 1ms 100 0.1 10ms 100ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TA = 25oC 10 0.01 1s DC 1 SINGLE PULSE 1E-3 0.1 1 10 100 1000 0.1 -3 10 10 -2 Figure 11. Forward Bias Safe Operating Area VDS, DRAIN-SOURCE VOLTAGE (V) 10 10 10 t, PULSE WIDTH (s) -1 0 1 10 2 10 3 Figure 12. Single Pulse Maximum Power Dissipation FDMS2734 Rev.C 4 www.fairchildsemi.com FDMS2734 N-Channel UltraFET Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 1E-3 SINGLE PULSE t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 1E-4 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDMS2734 Rev.C 5 www.fairchildsemi.com FDMS2734 N-Channel UltraFET Trench(R) MOSFET FDMS2734 Rev.C 6 www.fairchildsemi.com FDMS2734 N-Channel UItraFET Trench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 Preliminary No Identification Needed Full Production Obsolete Not In Production FDMS2734 Rev.C 7 www.fairchildsemi.com |
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